Journal Papers

    Key:  * Inter-group collaboration; + International collaboration; ^ Collaboration with other UK group

    2025

    ·         +B. Sun, C. Yao, T. Li, Z. Zhang, P. Bao, M. Chen, A. Yuan, C. Tan, Z. Shi, A. Wonfor, S. Savory, K. Bergman, R. Penty, and Q. Cheng, "Tri-Layer SiN-on-Si 8×8 Optical Switches with Thermo-optic and Electro-optic Actuator," Journal of Lightwave Technology, vol. 43, no. 11, pp. 5400-5406, 1 June, 2025, doi: 10.1109/JLT.2025.3545568.

    ·         H. Huang, Z. Shi, C. Yao, R. Penty, and Q. Cheng, "Wavelength-agnostic 3D-nanoprinted coupler," Laser & Photonics Reviews, p. e01728, 2025, doi: 10.1002/lpor.202501728.

    ·         +Y. Wang, L. Luo, S. Xing, C. Yao, R. Penty, and Q. Cheng, "Integrated photonic recurrent processors," Advanced Photonics, vol. 7, no. 5, pp. 054003-054003, Oct. 2025, doi: 10.1117/1.AP.7.5.054003.

    ·         +J. Yuan, H. Jia, C. Dear, H. Deng, M. G. Masteghin, K. E. Hajraoui, J. Li, K. Liu, M. Bai, J. B. Wagner, Q. M. Ramasse, M. Tang, A. Seeds, H. Liu, “C-band InAs/InP quantum dots: alternative growth versus indium-flush for self-assembled growth”, Semicond. Sci. Technol., 40, 2025, 105013, doi: 10.1088/1361-6641/ae10d5

    ·         X.  Zhang, H. Zeng, H. Jia, X. Yu, S. Huo, M. Mtunzi, H. Deng, J. Park, H. Wang, A. Seeds, H. Liu and M. Tang , “Optimisation of argon plasma pre-treatment for enhanced silicon surface preparation for germanium epitaxy”, 2025 J. Phys. D: Appl. Phys. 58 425103, doi;10.1088/1361-6463/ae0fa6

    ·         +D. Lei, J. Wang, B. Ratiu, H. Deng, X. Zhang, Z. Yan, S. Huo, L. Cao, W. Li, S. Chen, Q. Li, H. Liu, N. C. Panoiu and M. Tang, “Ultralow-threshold single-mode quantum-dot laser operating at O-band based on bound-states in the continuum”, 2025 J. Phys. D: Appl. Phys. 58 415105, doi;10.1088/1361-6463/ae0b80

    ·         *Zhao Yan, Shangfeng Liu, Bogdan-Petrin Ratiu, Ka Ming Wong, Haotian Zeng, Yangqian Wang, Jae-Seong Park, Hui Jia, Mingchu Tang, Huiyun Liu, Peter M. Smowton, and Qiang Li, “MOCVD-grown InAs/InP quantum dot lasers with low threshold current”, Optics Express, 2025, doi:10.1364/OE.568365

    ·         +S. Xing, A. Sun, C. Wang, Y. Wang, B. Dong, J. Hu, X. Deng, A. Yan, Y. Liu, F. Hu, Z. Li, Q. Huang, J. Zhao, Y. Zhou, Z. Li, J. Shi, X. Xiao, R. Penty, Q. Cheng, N. Chi, and J. Zhang, “Seamless optical cloud computing across edge-metro network for generative AI,” Nature Commun., vol. 16, Art. no. 6097(2025), Jul. 2025, doi: 10.1038/s41467-025-61495-6

    ·         +M. Mtunzi, H. Zeng, L. Bao, C. Chen, J. Park, Y. Wang, H. Deng, H. Jia, J. Li, Y. Hou, M. Masteghin, R. Beanland, F. Gardes, J. Moeyaert, T. Baron, M. Tang, A. Seeds, and H. Liu, “MBE growth of InAs/GaAs quantum dot lasers on V-grooved (001) Si,” J. Phys. D, Appl. Phys., vol. 58, Sept. 2025. Art. No. 405101, doi: 10.1088/1361-6463/ae074b.

    ·         ^P. Mishra, A. Enderson, F. Albeladi, Q. Qiao, G. Jandu, L. Jarvis, S. Gillgrass, B. Raitu, N. Peng, H. Deng, M. Tang, H. Liu, S. Shutts, and P. Smowton, “Achieving selectivity and reduced absorption for low loss monolithic InAs QD based III-V photonic integration,” J. Phys. D, Appl. Phys., vol. 58, Jun. 2025, Art. no. 265104, doi: 10.1088/1361-6463/ade450.

    ·         *P. Mishra, L. Jarvis, C. Hodges, A. Enderson, F. Albeladi, S. Gillgrass, G. Jandu, R. Forrest, C. Allford, H. Deng, M. Tang, H. Liu, S. Shutts, and P. Smowton, “High temperature operation of co-doped InAs quantum dot laser for O-band emission,” IEEE Photon. J., vol. 17, no. 3, Jun. 2025, Art. no. 0600606, doi: 10.1109/JPHOT.2025.3560443.

    ·         +J. Park, H. Jia, H. Zeng, Y. Wang, J. Yuan, J. Li, S. Liu, C. Dear, K. Liu, C. Chen, H. Deng, M. Martin, Q. Li, T. Baron, M. Tang, A. Seeds, and H. Liu, “Low threshold InAs/InP quantum dot lasers,” Opt. Express, vol. 33, 2025, doi: 10.1364/OE.561471.

    ·         X. Zhang, H. Deng, H. Zeng, H. Jia, M. Bai, D. Lei, H. Wang, L. Cao, J. Yang, T. Stock, W. Li, S. Chen, A. Seeds, H. Liu, and M. Tang, “Antiphase boundary-free III–V materials epitaxially grown on on-axis silicon (001) substrates by ultra-thin silicon buffer,” APL Mater., vol. 13, 2025, doi: 10.1063/5.0259915.

    ·         +J. Park, H. Deng, S. Pan, H. Wang, Y. Wang, J. Yuan, X. Zhang, H. Zeng, H. Jia, M. Dang, P. Mishra, G. Jandu, S. Chen, P. Smowton, A. Seeds, H. Liu, and M. Tang, “High operating temperature (> 200° C) InAs/GaAs quantum-dot laser with co-doping technique,” J. Phys. D, Appl. Phys., vol. 58, 2025, doi: 10.1088/1361-6463/adc275.

    ·         +K. Papatryfonos, J. Girard, M. Tang, H. Deng, A. Seeds, C. David, G. Rodary, L. Liu, and D. Selviah, “Low‐defect quantum dot lasers directly grown on silicon exhibiting low threshold current and high output power at elevated temperatures,” Adv. Photon. Res., vol. 6, 2025, doi: 10.1002/adpr.202400082.

    ·         +V. Cao, Z. Wang, W. Wang, S. Pan, Z. Liu, M. Tang, H. Liu, X. Xiao, and S. Chen, “Enhanced gain in O-band quantum-dot semiconductor optical amplifier based on a dual-pass amplification scheme,” Opt. Express, vol. 33, 2025, doi: 10.1364/OE.557329.

    ·         ^S. Church, F. Vitale, A. Gopakumar, N. Gagrani, Y. Zhang, N. Jiang, H. Tan, C. Jagadish, H. Liu, H. Joyce, C. Ronning, and P. Parkinson, “Data‐driven discovery for robust optimization of semiconductor nanowire lasers,” Laser Photon. Rev., vol. 19, 2025, doi: 10.1002/lpor.202401194.

    ·         +J. Xiong, Z. Chen, T. Gong, J. Dong, W. Hu, Z. Ma, Y. Deng, J. Zheng, X. Zhang, J. Ma, L. Chen, J. Li, X. Wang, Y. Qiu, M. Dang, H. Deng, M. Tang, H. Liu, J. Zhu, and P. Ruterana, “Inhibition of Pt-InGaAs chemical reaction by Al incorporation: towards stable Pt Schottky barriers on GaAs-based alloys and compounds,” J. Phys. D, Appl. Phys., vol. 58, 2025, doi: 10.1088/1361-6463/ada805.

    ·         *M. Mtunzi, H. Jia, M. Masteghin, Y. Hou, H. Zeng, H. Deng, J. Park, C. Chen, J. Li, X. Yan, I. Skandalos, F. Gardes, M. Tang, A. Seeds, and H. Liu, “GaAs growth on Ge‐buffered discontinuous (111)‐faceted V‐groove silicon substrates,” Adv. Phys. Res., vol. 4, 2025, doi: 10.1002/apxr.202500026.

    ·         +I. Skandalos, T. Bucio, L. Mastronardi, G. Yu, A. Zilkie, and F. Gardes, “A 100 Gb s⁻¹ quantum-confined Stark effect modulator monolithically integrated with silicon nitride on Si,” Commun. Eng., vol. 4, 2025, doi: 10.1038/s44172-025-00421-6.

    ·         P. Bao, C. Yao, R. Penty, and Q. Cheng, “Silicon electro-optic Mach-Zehnder switch fabric with ultralow-crosstalk,” J. Lightw. Technol., vol. 43, 2025, doi: 10.1109/JLT.2025.3548981.

    ·         P. Bao, C. Yao, C. Tan, A. Y. Yuan, M. Chen, S. J. Savory, R. Penty, and Q. Cheng, “Ultra-low-crosstalk silicon switches driven thermally and electrically,” Microsyst. Nanoeng., vol. 11, Art. no. 58, 2025, doi: 10.1038/s41378-025-00911-9.

    ·         Z. Zhang, M. Chen, R. Ma, B. Sun, A. Wonfor, R. Penty, and Q. Cheng, “Dilated space-and-wavelength selective crosspoint optical switch,” Photon. Res., vol. 13, 2025, doi: 10.1364/PRJ.543402.

    ·         *P. Mishra, L. Jarvis, C. Hodges, A. Enderson, F. Albeladi, S. Gillgrass, G. Jandu, R. Forrest, C. Allford, H. Deng, M. Tang, H. Liu, S. Shutts, and P. Smowton, “High temperature operation of codoped InAs quantum dot laser for O-band emission,” IEEE Photon. J., vol. 17, 2025, doi: 10.1109/JPHOT.2025.3560443.

    ·         +Y. Wang, M. Chen, C. Yao, J. Ma, T. Yan, R. Penty, and Q. Cheng, “Asymmetrical estimator for training encapsulated deep photonic neural networks,” Nature Commun., vol. 16, Art. no. 2143, 2025, doi: 10.1038/s41467-025-57459-5.

    ·         +Z. Zhang, I. Skandalos, R. Ma, M. Chen, B. Sun, C. Zhong, F. Gardes, Q. Cheng, and R. Penty, “Compact deep-groove-assisted bends on SiN platform for monolithic integrated laser,” Opt. Express, vol. 33, no. 3, pp. 4383–4395, Feb. 2025, doi: 10.1364/OE.541993.

    ·         ^C. Dear, J. Park, H. Jia, K. Hajraoui, J. Yuan, Y. Wang, Y. Hou, H. Deng, Q. Li, Q. Ramasse, A. Seeds, M. Tang, and H. Liu, “The effect of rapid thermal annealing on 1.55 μm InAs/InP quantum dots,” J. Phys. D, Appl. Phys., vol. 58, no. 12, Mar. 2025, Art. no. 125104, doi: 10.1088/1361-6463/adabf1.

    ·         B. Sun, C. Yao, T. Li, Z. Zhang, P. Bao, M. Chen, Y. Yuan, C. Tan, Z. Shi, A. Wonfor, S. Savory, K. Bergman, R. Penty, and Q. Cheng, “Tri-layer SiN-on-Si 8×8 optical switches with thermo-optic and electro-optic actuators,” J. Lightw. Technol., 2025, doi: 10.48550/arXiv.2502.11297.

      2024

      ·         +C. Yao, W. Zhang, P. Bao, J. Ma, M. Chen, Z. Shi, J. Zhou, Y. Ye, L. Ming, T. Yan, R. Penty, and Q. Cheng, “Chip-scale sensor for spectroscopic metrology,” Nature Commun., vol. 15, Art. no. 10305, 2024, doi: 10.1038/s41467-024-54708-x.

      ·         ^J. Yuan, C. Dear, H. Jia, J. Park, Y. Hou, K. Hajraoui, H. Zeng, H. Deng, J. Yang, M. Tang, S. Chen, Q. Ramasse, Q. Li, A. Seeds, and H. Liu, “Indium-flush technique for C-band InAs/InP quantum dots,” APL Mater., vol. 12, no. 12, Art. no. 121109, 2024, doi: 10.1063/5.0239360.

      ·         +H. Huang, Z. Shi, Z. Talli, M. Kuschnerov, R. Penty, and Q. Cheng, “Photonic chiplet interconnection via 3D-nanoprinted interposer,” Light Adv. Manuf., vol. 5, 2024, doi: 10.37188/lam.2024.046.

      ·         M. Chen, Y. Wang, C. Yao, A. Wonfor, S. Yang, R. Penty, and Q. Cheng, “I/O-efficient iterative matrix inversion with photonic integrated circuits,” Nature Commun., vol. 15, Art. no. 5926, 2024, doi: 10.1038/s41467-024-50302-3.

      ·         +C. Yao, K. Xu, T. Lin, J. Ma, P. Bao, Z. Shi, R. Penty, and Q. Cheng, “Benchmarking reconstructive spectrometer with multi-resonant cavities,” ACS Photon., vol. 11, no. 9, pp. 3730–3740, 2024, doi: 10.1021/acsphotonics.4c00915.

      ·         +S. Liu, B. Ratiu, H. Jia, Z. Yan, K. Wong, M. Martin, M. Tang, T. Baron, H. Liu, and Q. Li, “Effective InAsP dislocation filtering layers for InP heteroepitaxy on CMOS-standard (001) silicon,” Appl. Phys. Lett., vol. 125, 2024, doi: 10.1063/5.0219507.

      ·         +B. Xu, C. Jin, J. Park, H. Liu, X. Lin, J. Cui, D. Chen, and J. Qiu, “Emerging near‐infrared luminescent materials for next‐generation broadband optical communications,” InfoMat, vol. 6, Art. no. e12550, 2024, doi: 10.1002/inf2.12550.

      ·         ^X. Yu, H. Jia, J. Yang, M. Masteghin, H. Beere, M. Mtunzi, H. Deng, S. Huo, C. Chen, S. Chen, M. Tang, S. Sweeney, D. Ritchie, A. Seeds, and H. Liu, “Effects of phosphorous and antimony doping on thin Ge layers grown on Si,” Sci. Rep., vol. 14, Art. no. 7969, 2024, doi: 10.1038/s41598-024-57937-8.

      ·         +V. Cao, S. Pan, D. Wu, H. Zhang, M. Tang, A. Seeds, H. Liu, X. Xiao, and S. Chen, “A novel bidirectionally operated chirped quantum-dot based semiconductor optical amplifier using a dual ground state spectrum,” APL Photon., vol. 9, Art. no. 046110, 2024, doi: 10.1063/5.0194677.

      ·         +M. Mtunzi, H. Jia, Y. Hou, X. Yu, H. Zeng, J. Yang, X. Yan, I. Skandalos, H. Deng, J. Park, W. Li, A. Li, K. Hajraoui, Q. Ramasse, F. Gardes, M. Tang, S. Chen, A. Seeds, and H. Liu, “High-quality germanium growth on (111)-faceted V-groove silicon by molecular beam epitaxy,” J. Phys. D, Appl. Phys., vol. 57, Art. no. 255101, 2024, doi: 10.1088/1361-6463/ad31e0.

      ·         *B. Maglio, L. Jarvis, M. Tang, H. Liu, and P. Smowton, “Modelling the effects of p-modulation doping in InAs/InGaAs quantum dot devices,” Opt. Quantum Electron., vol. 56, no. 4, Art. no. 687, 2024, doi: 10.1007/s11082-024-06362-2.

      ·         +K. Papatryfonos, J. Girard, M. Tang, H. Deng, A. Seeds, C. David, G. Rodary, H. Liu, and D. Selviah, “Low‐defect quantum dot lasers directly grown on silicon exhibiting low threshold current and high output power at elevated temperatures,” Adv. Photon. Res., Art. no. 2400082, 2024, doi: 10.1002/adpr.202400082.

      ·         *H. Deng, J. Park, X. Yu, Z. Liu, H. Jia, H. Zeng, J. Yang, S. Pan, S. Chen, A. Seeds, M. Tang, P. Smowton, and H. Liu, “1.3 µm InAs/GaAs quantum‐dot lasers with p‐type, n‐type, and co‐doped modulation,” Adv. Phys. Res., Art. no. 2400045, 2024, doi: 10.1002/apxr.202400045.

      2023

      ·         Y. Noori, I. Skandalos, X. Yan, N. Zhelev, Y. Hou, and F. Gardes, “Wafer bonding for processing small wafers in large wafer facilities,” IEEE Trans. Compon. Packag. Manuf. Technol., pp. 1–1, 2023, doi: 10.1109/TCPMT.2023.3341329.

      ·         +J. Ma, T. Zhou, M. Tang, H. Li, Z. Zhang, X. Xi, M. Martin, T. Baron, H. Liu, Z. Zhang, S. Chen, and X. Sun, “Room-temperature continuous-wave topological Dirac-vortex microcavity lasers on silicon,” Light Sci. Appl., vol. 12, Art. no. 255, 2023, doi: 10.1038/s41377-023-01290-4.

      ·         ^M. Dang, H. Deng, S. Huo, R. Juluri, A. M. Sanchez, A. Seeds, H. Liu, and M. Tang, “The growth of low-threading-dislocation-density GaAs buffer layers on Si substrates,” J. Phys. D, Appl. Phys., vol. 56, no. 40, Art. no. 405108, 2023, doi: 10.1088/1361-6463/ace36d.

      ·         +F. Albeladi, S. J. Gillgrass, J. Nabialek, P. Mishra, R. Forrest, T. Albiladi, C. P. Allford, H. Deng, M. Tang, H. Liu, S. Shutts, and P. M. Smowton, “Design and characterisation of multi-mode interference reflector lasers for integrated photonics,” J. Phys. D, Appl. Phys., vol. 56, Art. no. 384001, 2023, doi: 10.1088/1361-6463/acdb80.

      ·         *Y. Hou, I. Skandalos, M. Tang, H. Jia, H. Deng, X. Yu, Y. Noori, S. Stathopoulos, S. Chen, H. Liu, A. Seeds, G. Reed, and F. Gardes, “Surface/interface engineering of InAs quantum dot edge-emitting diodes toward III-V/SiN photonic integration,” J. Lumin., vol. 258, Art. no. 119799, 2023, doi: 10.1016/j.jlumin.2023.119799.

      ·         +V. Cao, S. Pan, Y. Fan, D. Wu, M. Tang, A. Seeds, H. Liu, X. Xiao, and S. Chen, “Distortion-free amplification of 100 GHz mode-locked optical frequency comb using quantum dot technology,” Opt. Express, vol. 31, no. 11, pp. 18147–18158, 2023, doi: 10.1364/OE.486707.

      ·         X. Yu, H. Jia, C. Dear, J. Yuan, H. Deng, M. Tang, and H. Liu, “Optically enhanced single- and multi-stacked 1.55 μm InAs/InAlGaAs/InP quantum dots for laser applications,” J. Phys. D, Appl. Phys., vol. 56, no. 28, Art. no. 285101, 2023, doi: 10.1088/1361-6463/acc875.

      ·         +H. Li, M. Tang, T. Zhou, W. Xie, R. Li, Y. Gong, M. Martin, T. Baron, S. Chen, H. Liu, and Z. Zhang, “Monolithically integrated photonic crystal surface emitters on silicon with a vortex beam by using bound states in the continuum,” Opt. Lett., vol. 48, pp. 1702–1705, 2023, doi: 10.1364/OL.484472.

      ·         +H. Jia, X. Yu, T. Zhou, C. Dear, J. Yuan, M. Tang, Z. Yan, B. P. Ratiu, Q. Li, A. Seeds, H. Liu, and S. Chen, “Long-wavelength InAs/InAlGaAs quantum dot microdisk lasers on InP (001) substrate,” Appl. Phys. Lett., vol. 122, no. 11, 2023, doi: 10.1063/5.0142391.

      ·         +C. Yao, K. Xu, W. Zhang, M. Chen, Q. Cheng, and R. Penty, “Integrated reconstructive spectrometer with programmable photonic circuits,” Nature Commun., vol. 14, no. 1, Art. no. 6376, 2023, doi: 10.1038/s41467-023-42197-3.

      ·         +C. Yao, M. Chen, T. Yan, L. Ming, Q. Cheng, and R. Penty, “Broadband picometer-scale resolution on-chip spectrometer with reconfigurable photonics,” Light Sci. Appl., vol. 12, no. 1, Art. no. 156, 2023, doi: 10.1038/s41377-023-01195-2.

      ·         +A. Leitenstorfer, A. Moskalenko, T. Kampfrath, J. Kono, E. Castro-Camus, K. Peng, N. Qureshi, M. Havenith, C. Hough, H. Joyce, W. Padilla, B. Zhou, K. Kim, X. Zhang, P. Jespen, S. Dhillon, M. Vitiello, E. Linfield, A. Davies, M. Hoffmann, R. Lewis, M. Tonouchi, P. Klarskov, T. Seifert, Y. Gerasimenko, D. Mihailovic, R. Huber, J. Boland, O. Mitrofanov, P. Dean, B. Ellison, P. Huggard, S. Rea, C. Walker, D. Leisawitz, J. Gao, C. Li, Q. Chen, G. Valusis, V. Wallace, E. Pickwell-MacPherson, X. Shang, J. Hesler, N. Ridler, C. Renaud, I. Kallfass, T. Nagatsuma, J. Zeitler, D. Arnone, M. Johnston, and J. Cunningham, “The 2023 terahertz science and technology roadmap,” J. Phys. D, Appl. Phys., vol. 56, no. 22, 2023, doi: 10.1088/1361-6463/acbe4c.

      ·         *Y. Hou, I. Skandalos, M. Tang, H. Jia, H. Deng, X. Yu, Y. Noori, S. Stathopoulos, S. Chen, H. Liu, A. Seeds, G. Reed, and F. Gardes, “Surface/interface engineering of InAs quantum dot edge-emitting diodes toward III-V/SiN photonic integration,” J. Lumin., vol. 258, Art. no. 119799, 2023, doi: 10.1016/j.jlumin.2023.119799.

      ·         +D. Guo, J. Huang, M. Benamara, Y. Mazur, Z. Deng, G. Salamo, H. Liu, B. Chen, and J. Wu, “High operating temperature mid-infrared InGaAs/GaAs submonolayer quantum dot quantum cascade detectors on silicon,” IEEE J. Quantum Electron., vol. 59, no. 2, pp. 1–6, 2023, Art. no. 2300106, doi: 10.1109/JQE.2023.3238754.

      ·         J. Yang, M. Tang, S. Chen, and H. Liu, “From past to future: on-chip laser sources for photonic integrated circuits,” Light Sci. Appl., vol. 12, no. 1, Art. no. 16, Jan. 2023, doi: 10.1038/s41377-022-01006-0.

      2022

      ·         +A. Li, C. Yao, J. Xia, H. Wang, Q. Cheng, R. Penty, Y. Fainman, and S. Pan, “Advances in cost-effective integrated spectrometers,” Light Sci. Appl., vol. 11, no. 1, Art. no. 174, Jun. 2022, doi: 10.1038/s41377-022-00853-1.

      ·         +T. Zhou, J. Ma, M. Tang, H. Li, M. Martin, T. Baron, H. Liu, S. Chen, X. Sun, and Z. Zhang, “Monolithically integrated ultralow threshold topological corner state nanolasers on silicon,” ACS Photon., vol. 9, no. 12, pp. 3824–3830, 2022, doi: 10.1021/acsphotonics.2c00711.

      ·         +A. Beckert, M. Grimm, R. Hermans, J. Freeman, E. Linfield, A. Davies, M. Müller, H. Sigg, S. Gerber, G. Matmon, and G. Aeppli, “Precise determination of the low-energy electronuclear Hamiltonian of LiY1−xHoxF4,” Phys. Rev. B, vol. 106, Art. no. 115119, 2022, doi: 10.1103/PhysRevB.106.115119.

      ·         +E. Tough, M. Fice, G. Carpintero, C. Renaud, A. Seeds, and K. Balakier, “InP integrated optical frequency comb generator using an amplified recirculating loop,” Opt. Express, vol. 30, no. 24, pp. 43195–43208, 2022, doi: 10.1364/OE.469942.

      ·         *H. Deng, L. Jarvis, Z. Li, Z. Liu, M. Tang, K. Li, J. Yang, B. Maglio, S. Shutts, J. Yu, L. Wang, S. Chen, C. Jin, A. Seeds, H. Liu, and P. Smowton, “The role of different types of dopants in 1.3 μm InAs/GaAs quantum-dot lasers,” J. Phys. D, Appl. Phys., vol. 55, no. 21, Art. no. 215105, 2022, doi: 10.1088/1361-6463/ac55c4.

      ·         +J. Yang, K. Li, H. Jia, H. Deng, X. Yu, P. Jurczak, J. S. Park, S. Pan, W. Li, S. Chen, A. Seeds, M. Tang, and H. Liu, “Low threading dislocation density and antiphase boundary free GaAs epitaxially grown on on-axis Si (001) substrates,” Nanoscale, vol. 14, no. 46, pp. 17247–17253, 2022, doi: 10.1039/D2NR04866C.

      ·         +H. Jia, J. Yang, M. Tang, W. Li, P. Jurczak, X. Yu, T. Zhou, J. Park, K. Li, H. Deng, X. Yu, A. Li, S. Chen, A. Seeds, and H. Liu, “The epitaxial growth and unique morphology of InAs quantum dots embedded in a Ge matrix,” J. Phys. D, Appl. Phys., vol. 55, no. 49, Art. no. 494002, 2022, doi: 10.1088/1361-6463/ac95a3.

      ·         +Y. Lu, X. Hu, M. Tang, V. Cao, J. Yan, D. Wu, J. Park, H. Liu, X. Xiao, and S. Chen, “Analysis of the regimes of feedback effects in quantum dot laser,” J. Phys. D, Appl. Phys., vol. 55, Art. no. 484003, 2022, doi: 10.1088/1361-6463/ac9689.

      ·         *J. Liu, M. Tang, H. Deng, S. Shutts, L. Wang, P. Smowton, C. Jin, S. Chen, A. Seeds, and H. Liu, “Theoretical analysis and modelling of degradation for III–V lasers on Si,” J. Phys. D, Appl. Phys., vol. 55, Art. no. 404006, 2022, doi: 10.1088/1361-6463/ac83d3.

      ·         *S. Pan, H. Zhang, Z. Liu, M. Liao, M. Tang, D. Wu, X. Hu, J. Yan, L. Wang, M. Guo, Z. Wang, T. Wang, P. Smowton, A. Seeds, H. Liu, X. Xiao, and S. Chen, “Multi-wavelength 128 Gbit s⁻¹ λ⁻¹ PAM4 optical transmission enabled by a 100 GHz quantum dot mode-locked optical frequency comb,” J. Phys. D, Appl. Phys., vol. 55, no. 14, Art. no. 144001, 2022, doi: 10.1088/1361-6463/ac4365.

      ·         *V. Cao, J. Park, M. Tang, T. Zhou, A. Seeds, S. Chen, and H. Liu, “Recent progress of quantum dot lasers monolithically integrated on Si platform,” Front. Phys., vol. 10, 2022, doi: 10.3389/fphy.2022.839953.

      ·         J. Seddon, M. Natrella, X. Lin, C. Graham, C. Renaud, and A. Seeds, “Photodiodes for terahertz applications,” IEEE J. Sel. Top. Quantum Electron., vol. 28, no. 2, pp. 1–12, Mar.–Apr. 2022, doi: 10.1109/JSTQE.2021.3108954.

      ·         +Y. Huang, T. Zhou, M. Tang, G. Xiang, H. Li, M. Martin, T. Baron, and Z. Zhang, “Highly integrated photonic crystal bandedge lasers monolithically grown on Si substrates,” Chin. Opt. Lett., vol. 20, no. 4, Art. no. 041401, 2022, doi: 10.3788/COL202220.041401.

      ·         *J. Mahoney, M. Tang, H. Liu, and N. Abadia, “Measurement of the quantum-confined Stark effect in InAs/In(Ga)As quantum dots with p-doped quantum dot barriers,” Opt. Express, vol. 30, no. 11, pp. 17730–17738, 2022, doi: 10.1364/OE.455491.

      ·         +C. Yao, Q. Cheng, G. Roelkens, and R. Penty, “Bridging the gap between resonance and adiabaticity: a compact and highly tolerant vertical coupling structure,” Photon. Res., vol. 10, no. 9, pp. 2081–2090, 2022, doi: 10.1364/PRJ.465765.

      ·         *T. Zhou, M. Tang, H. Li, Z. Zhang, Y. Cui, J. Park, M. Martin, T. Baron, S. Chen, H. Liu, and Z. Zhang, “Single-mode photonic crystal nanobeam lasers monolithically grown on Si for dense integration,” IEEE J. Sel. Top. Quantum Electron., vol. 28, no. 3, Art. no. 3133546, May 2022, doi: 10.1109/JSTQE.2021.3133546.

      ·         *Y. Hou, H. Jia, M. Tang, A. Mosberg, Q. Ramasse, I. Skandalos, Y. Noori, J. Yang, H. Liu, A. Seeds, and F. Gardes, “A thermally erasable silicon oxide layer for molecular beam epitaxy,” J. Phys. D, Appl. Phys., vol. 55, no. 42, 2022, doi: 10.1088/1361-6463/ac8600.

      ·         Y. Hou and Y. Jung, “Spatially and spectrally resolved multicore optical fibre sensor with polarization sensitivity,” AIP Adv., vol. 12, Art. no. 065023, 2022, doi: 10.1063/5.0095297.

      ·         +F. Gardes, A. Shooa, G. De Paoli, I. Skandalos, S. Ilie, T. Rutirawut, W. Talataisong, J. Faneca, V. Vitali, Y. Hou, T. Bucio, I. Zeimpekis, C. Lacava, and P. Petropoulos, “A review of capabilities and scope for hybrid integration offered by silicon-nitride-based photonic integrated circuits,” Sensors, vol. 22, no. 11, Art. no. 4227, 2022, doi: 10.3390/s22114227.

      ·         ^Y. Hou, M. Kappers, C. Jin, and R. Oliver, “Photocurrent detection of radially polarized optical vortex with hot electrons in Au/GaN,” Appl. Phys. Lett., vol. 120, Art. no. 202101, 2022, doi: 10.1063/5.0094454.

      2021

      ·         +Z. Li, S. Shutts, Y. Xue, W. Luo, K. Lau, and P. Smowton, “Optical gain and absorption of 1.55 μm InAs quantum dash lasers on silicon substrate,” Appl. Phys. Lett., vol. 118, Art. no. 131101, 2021, doi: 10.1063/5.0043815.

      ·         *J. Yang, Z. Liu, P. Jurczak, M. Tang, K. Li, S. Pan, A. Sanchez, R. Beanland, J. Zhang, H. Wang, F. Liu, Z. Li, S. Shutts, P. Smowton, S. Chen, A. Seeds, and H. Liu, “All-MBE grown InAs/GaAs quantum dot lasers with thin Ge buffer layer on Si substrates,” J. Phys. D, Appl. Phys., vol. 54, no. 3, Art. no. 035103, 2021, doi: 10.1088/1361-6463/abbb49.

      ·         +P. Matin, J. Wu, H. Liu, J. Seddon, and A. Seeds, “Modeling of ultrafast waveguided electro-absorption modulator at telecommunication wavelength (λ = 1.55 μm) based on intersubband transition in an InGaAs/AlAs/AlAsSb asymmetric coupled double quantum well lattice-matched to InP,” IEEE J. Quantum Electron., vol. 57, no. 4, pp. 1–10, Aug. 2021, Art. no. 5200110, doi: 10.1109/JQE.2021.3087327.

      ·         *J. Park, M. Tang, S. Chen, and H. Liu, “Monolithic III–V quantum dot lasers on silicon,” Front. Nanosci., vol. 20, pp. 353–388, 2021, doi: 10.1016/B978-0-12-822083-2.00009-5.

      ·         *K. Papatryfonos, T. Angelova, A. Brimont, B. Reid, S. Guldin, P. Smith, M. Tang, K. Li, A. Seeds, H. Liu, and D. Selviah, “Refractive indices of MBE-grown AlxGa(1−x)As ternary alloys in the transparent wavelength region,” AIP Adv., vol. 11, no. 2, Art. no. 025327, 2021, doi: 10.1063/5.0039631.

      ·         *K. Papatryfonos, D. Selviah, A. Maman, K. Hasharoni, A. Brimont, A. Zanzi, J. Kraft, V. Sidorov, M. Seifried, Y. Baumgartner, F. Horst, B. Offrein, K. Lawniczuk, R. Broeke, N. Terzenidis, G. Mourgias-Alexandris, M. Tang, A. Seeds, H. Liu, P. Sanchis, M. Moralis-Pegios, T. Manolis, N. Pleros, K. Vyrsokinos, B. Sirbu, Y. Eichhammer, H. Oppermann, and T. Tekin, “Co-package technology platform for low-power and low-cost data centers,” Appl. Sci., vol. 11, no. 13, Art. no. 6098, 2021, doi: 10.3390/app11136098.

      ·         +A. Muqaddas, R. Tessinari, R. Casellas, M. Garrich, E. Hugues-Salas, Ó. de Dios, L. Luque, A. Giorgetti, A. Sgambelluri, F. Cugini, F. Moreno-Muro, R. Morro, K. Farrow, A. Wonfor, M. Channegowda, P. Pavón-Mariño, A. Lord, R. Nejabati, and D. Simeonidou, “NFV orchestration over disaggregated metro optical networks with end-to-end multi-layer slicing enabling crowdsourced live video streaming,” J. Opt. Commun. Netw., vol. 13, pp. D68–D79, 2021, doi: 10.1364/JOCN.423501.

      ·         *L. Gonzalez-Guerrero, H. Shams, I. Fatadin, J. Wu, M. Fice, M. Naftaly, A. Seeds, and C. Renaud, “Pilot-tone assisted 16-QAM photonic wireless bridge operating at 250 GHz,” J. Lightw. Technol., vol. 39, no. 9, pp. 2725–2736, 2021, doi: 10.1109/JLT.2021.3053616.

      2020

      ·         *J. Park, M. Tang, S. Chen, and H. Liu, “Heteroepitaxial growth of III-V semiconductors on silicon,” Crystals, vol. 10, no. 12, Art. no. 1163, 2020, doi: 10.3390/cryst10121163.

      ·         *+S. Pan, J. Huang, Z. Zhou, Z. Liu, L. Ponnampalam, Z. Liu, M. Tang, M. Lo, Z. Cao, K. Nishi, K. Takemasa, M. Sugawara, R. Penty, I. White, A. Seeds, H. Liu, and S. Chen, “Quantum dot mode-locked frequency comb with ultra-stable 25.5 GHz spacing between 20°C and 120°C,” Photon. Res., vol. 8, pp. 1937–1942, 2020, doi: 10.1364/PRJ.399957.